IndiumV3, Main, Repository, bibRecord, 000E32

Effects of growth conditions on the formation of self-assembled InAs quantum dots grown on (1 1 5)A GaAs substrate

Identifieur interne : 000E32 ( Main/Repository ); précédent : 000E31; suivant : 000E33

Effects of growth conditions on the formation of self-assembled InAs quantum dots grown on (1 1 5)A GaAs substrate

Auteurs : RBID : Pascal:13-0182077

Descripteurs français

Pascal (Inist)
- Condition opératoire, Autoassemblage, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, RHEED, Photoluminescence, Mouillage, Mouillabilité, Reconstruction surface, Effet tunnel, Continuum, Arséniure de gallium, Défaut croissance, Substrat GaAs, 8116D, 8107T, 8535B, 8107B.

English descriptors

KwdEn :
- Continuum, Gallium arsenides, Growth defect, III-V compound, III-V semiconductors, Indium arsenides, Nanostructured materials, Operating conditions, Photoluminescence, Quantum dots, RHEED, Self-assembly, Surface reconstruction, Tunnel effect, Wettability, Wetting.

Abstract

Effects of growth conditions on the formation of InAs quantum dots (QDs) grown on GaAs (1 1 5)A substrate were investigated by using the reflection high-energy electron diffraction (RHEED) and photoluminescence spectroscopy (PL). An anomalous evolution of wetting layer was observed when increasing the As/In flux ratio. This is attributed to a change in the surface reconstruction. PL measurements show that QDs emission was strongly affected by the InAs deposited amount. No obvious signature of PL emission QDs appears for sample with 2.2 ML InAs coverage. Furthermore, carrier tunneling from the dots to the non-radiative centers via the inclination continuum band is found to be the dominant mechanism for the InAs amount deposition up to 4.2 MLs.

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Pascal:13-0182077

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<author><name sortKey="Bennour, M" uniqKey="Bennour M">M. Bennour</name>
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<term>Indium arsenides</term>
<term>Nanostructured materials</term>
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<term>Self-assembly</term>
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<term>Autoassemblage</term>
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<front><div type="abstract" xml:lang="en">Effects of growth conditions on the formation of InAs quantum dots (QDs) grown on GaAs (1 1 5)A substrate were investigated by using the reflection high-energy electron diffraction (RHEED) and photoluminescence spectroscopy (PL). An anomalous evolution of wetting layer was observed when increasing the As/In flux ratio. This is attributed to a change in the surface reconstruction. PL measurements show that QDs emission was strongly affected by the InAs deposited amount. No obvious signature of PL emission QDs appears for sample with 2.2 ML InAs coverage. Furthermore, carrier tunneling from the dots to the non-radiative centers via the inclination continuum band is found to be the dominant mechanism for the InAs amount deposition up to 4.2 MLs.</div>
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Effects of growth conditions on the formation of self-assembled InAs quantum dots grown on (1 1 5)A GaAs substrate

Effects of growth conditions on the formation of self-assembled InAs quantum dots grown on (1 1 5)A GaAs substrate

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri